All MOSFET. PMPB95ENEA Datasheet

 

PMPB95ENEA Datasheet and Replacement


   Type Designator: PMPB95ENEA
   Marking Code: 2A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.9 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: DFN2020MD-6
 

 PMPB95ENEA substitution

   - MOSFET ⓘ Cross-Reference Search

 

PMPB95ENEA Datasheet (PDF)

 ..1. Size:234K  nxp
 pmpb95enea.pdf pdf_icon

PMPB95ENEA

PMPB95ENEA80 V, single N-channel Trench MOSFET17 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KO3416

Keywords - PMPB95ENEA MOSFET datasheet

 PMPB95ENEA cross reference
 PMPB95ENEA equivalent finder
 PMPB95ENEA lookup
 PMPB95ENEA substitution
 PMPB95ENEA replacement

 

 
Back to Top

 


 
.