All MOSFET. PMPB95ENEA Datasheet

 

PMPB95ENEA Datasheet and Replacement


   Type Designator: PMPB95ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: DFN2020MD-6
 

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PMPB95ENEA Datasheet (PDF)

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PMPB95ENEA

PMPB95ENEA80 V, single N-channel Trench MOSFET17 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti

Datasheet: PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , 20N50 , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE .

History: IRFU3505P | BUZ357

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