PMPB95ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB95ENEA
Marking Code: 2A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.9 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 43 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: DFN2020MD-6
PMPB95ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB95ENEA Datasheet (PDF)
..1. Size:234K nxp
pmpb95enea.pdf
pmpb95enea.pdf
PMPB95ENEA80 V, single N-channel Trench MOSFET17 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti
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