All MOSFET. PMR290UNE Datasheet

 

PMR290UNE Datasheet and Replacement


   Type Designator: PMR290UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SC-75
 

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PMR290UNE Datasheet (PDF)

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PMR290UNE

PMR290UNE20 V, 700 mA N-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trenc

Datasheet: PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , IRF1407 , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA .

History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F

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