PMR670UPE Specs and Replacement

Type Designator: PMR670UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SC-75

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PMR670UPE datasheet

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PMR670UPE

PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trenc... See More ⇒

Detailed specifications: PMPB33XP, PMPB40SNA, PMPB43XPE, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, TK10A60D, PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE

Keywords - PMR670UPE MOSFET specs

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