All MOSFET. PMR670UPE Datasheet

 

PMR670UPE Datasheet and Replacement


   Type Designator: PMR670UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SC-75
 

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PMR670UPE Datasheet (PDF)

 ..1. Size:179K  nxp
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PMR670UPE

PMR670UPE20 V, 480 mA P-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trenc

Datasheet: PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , 13N50 , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE .

History: 1N65G-TM3-T | NCE9926

Keywords - PMR670UPE MOSFET datasheet

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