PMR670UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMR670UPE
Marking Code: AD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 0.48 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.76 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SC-75
PMR670UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMR670UPE Datasheet (PDF)
..1. Size:179K nxp
pmr670upe.pdf
pmr670upe.pdf
PMR670UPE20 V, 480 mA P-channel Trench MOSFETRev. 1 13 September 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trenc
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