PMV250EPEA Datasheet. Specs and Replacement

Type Designator: PMV250EPEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-236AB

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PMV250EPEA datasheet

 ..1. Size:244K  nxp
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PMV250EPEA

PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected ... See More ⇒

 9.1. Size:371K  nxp
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PMV250EPEA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Detailed specifications: PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, IRF2807, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE

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