All MOSFET. PMV250EPEA Datasheet

 

PMV250EPEA Datasheet and Replacement


   Type Designator: PMV250EPEA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-236AB
 

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PMV250EPEA Datasheet (PDF)

 ..1. Size:244K  nxp
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PMV250EPEA

PMV250EPEA40 V, P-channel Trench MOSFET20 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected

 9.1. Size:371K  nxp
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PMV250EPEA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , STP80NF70 , PMV27UPE , PMV30UN2 , PMV37EN2 , PMV40UN2 , PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE .

History: SQD40N10-25

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