All MOSFET. PMV27UPE Datasheet

 

PMV27UPE Datasheet and Replacement


   Type Designator: PMV27UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-236AB
 

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PMV27UPE Datasheet (PDF)

 ..1. Size:440K  nxp
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PMV27UPE

PMV27UPE20 V, P-channel Trench MOSFET15 May 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat

 0.1. Size:854K  nxp
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PMV27UPE

PMV27UPEA20 V, P-channel Trench MOSFET30 October 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dis

Datasheet: PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , 13N50 , PMV30UN2 , PMV37EN2 , PMV40UN2 , PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE , PMV65XPEA .

History: SM3406NSQG

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