PMXB350UPE Specs and Replacement

Type Designator: PMXB350UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 16.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.447 Ohm

Package: DFN1010D-3

PMXB350UPE substitution

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PMXB350UPE datasheet

 ..1. Size:237K  nxp
 pmxb350upe.pdf pdf_icon

PMXB350UPE

PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic pa... See More ⇒

 9.1. Size:218K  nxp
 pmxb360enea.pdf pdf_icon

PMXB350UPE

PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic p... See More ⇒

Detailed specifications: PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP, PMXB120EPE, 8N60, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, PMXB75UPE, PMZ1200UPE

Keywords - PMXB350UPE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.