PMXB350UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMXB350UPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.25 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 16.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.447 Ohm
Package: DFN1010D-3
PMXB350UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMXB350UPE Datasheet (PDF)
pmxb350upe.pdf
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