All MOSFET. PMXB350UPE Datasheet

 

PMXB350UPE Datasheet and Replacement


   Type Designator: PMXB350UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 16.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.447 Ohm
   Package: DFN1010D-3
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PMXB350UPE Datasheet (PDF)

 ..1. Size:237K  nxp
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PMXB350UPE

PMXB350UPE20 V, P-channel Trench MOSFET24 January 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic pa

 9.1. Size:218K  nxp
 pmxb360enea.pdf pdf_icon

PMXB350UPE

PMXB360ENEA80 V, N-channel Trench MOSFET16 September 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic p

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History: CHM85A3PAGP

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