All MOSFET. PMXB350UPE Datasheet

 

PMXB350UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMXB350UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.25 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 16.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.447 Ohm
   Package: DFN1010D-3

 PMXB350UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMXB350UPE Datasheet (PDF)

 ..1. Size:237K  nxp
 pmxb350upe.pdf

PMXB350UPE PMXB350UPE

PMXB350UPE20 V, P-channel Trench MOSFET24 January 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic pa

 9.1. Size:218K  nxp
 pmxb360enea.pdf

PMXB350UPE PMXB350UPE

PMXB360ENEA80 V, N-channel Trench MOSFET16 September 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic p

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BSZ180P03NS3EG

 

 
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