PMXB56EN Specs and Replacement

Type Designator: PMXB56EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: DFN1010D-3

PMXB56EN substitution

- MOSFET ⓘ Cross-Reference Search

 

PMXB56EN datasheet

 ..1. Size:269K  nxp
 pmxb56en.pdf pdf_icon

PMXB56EN

PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package 1.1... See More ⇒

Detailed specifications: PMV65XPE, PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, IRFB31N20D, PMXB65ENE, PMXB65UPE, PMXB75UPE, PMZ1200UPE, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE

Keywords - PMXB56EN MOSFET specs

 PMXB56EN cross reference

 PMXB56EN equivalent finder

 PMXB56EN pdf lookup

 PMXB56EN substitution

 PMXB56EN replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.