All MOSFET. PMZ1200UPE Datasheet

 

PMZ1200UPE Datasheet and Replacement


   Type Designator: PMZ1200UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.41 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1006-3
 

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PMZ1200UPE Datasheet (PDF)

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PMZ1200UPE

PMZ1200UPE30 V, P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching El

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History: HY1607MF

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