PMZ1200UPE Specs and Replacement

Type Designator: PMZ1200UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 5.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: DFN1006-3

PMZ1200UPE substitution

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PMZ1200UPE datasheet

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 pmz1200upe.pdf pdf_icon

PMZ1200UPE

PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching El... See More ⇒

Detailed specifications: PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, PMXB75UPE, IRFZ48N, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2, PMZ320UPE, PMZ350UPE, PMZ370UNE

Keywords - PMZ1200UPE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.