PMZ130UNE Datasheet and Replacement
Type Designator: PMZ130UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 1.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: DFN1006-3
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PMZ130UNE Datasheet (PDF)
pmz130une.pdf

PMZ130UNE20 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology Ele
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: LP3218DT1G | CJPF04N80 | SRC60R680E | SI2308 | MPGJ10R7 | AP1RA03GMT-HF | SFF40N30MUB
Keywords - PMZ130UNE MOSFET datasheet
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History: LP3218DT1G | CJPF04N80 | SRC60R680E | SI2308 | MPGJ10R7 | AP1RA03GMT-HF | SFF40N30MUB



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