PMZ130UNE Specs and Replacement
Type Designator: PMZ130UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: DFN1006-3
PMZ130UNE substitution
PMZ130UNE datasheet
pmz130une.pdf
PMZ130UNE 20 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology Ele... See More ⇒
Detailed specifications: PMXB360ENEA , PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , PMXB75UPE , PMZ1200UPE , IRFZ46N , PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE .
History: 8N60KL-TF1-T | KQB27P06
Keywords - PMZ130UNE MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 8N60KL-TF1-T | KQB27P06
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