PMZ200UNE Specs and Replacement

Type Designator: PMZ200UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: DFN1006-3

PMZ200UNE substitution

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PMZ200UNE datasheet

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 pmz200une.pdf pdf_icon

PMZ200UNE

PMZ200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology Ele... See More ⇒

Detailed specifications: PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, PMXB75UPE, PMZ1200UPE, PMZ130UNE, IRF830, PMZ290UN, PMZ290UNE, PMZ290UNE2, PMZ320UPE, PMZ350UPE, PMZ370UNE, PMZ390UNE, PMZ550UNE

Keywords - PMZ200UNE MOSFET specs

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