All MOSFET. PMZ200UNE Datasheet

 

PMZ200UNE Datasheet and Replacement


   Type Designator: PMZ200UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: DFN1006-3
 

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PMZ200UNE Datasheet (PDF)

 ..1. Size:229K  nxp
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PMZ200UNE

PMZ200UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology Ele

Datasheet: PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , PMXB75UPE , PMZ1200UPE , PMZ130UNE , IRF1405 , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE .

History: AP9973GJ-HF | SFF440 | SIHF9530S | CEDM7004VL

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