PMZ290UNE Datasheet and Replacement
Type Designator: PMZ290UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: DFN1006-3
PMZ290UNE Datasheet (PDF)
pmz290une.pdf
PMZ290UNE20 V, N-channel Trench MOSFET14 May 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect
pmz290une2.pdf
PMZ290UNE220 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching El
pmz290un.pdf
PMZ290UN20 V, single N-channel Trench MOSFET6 November 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless and ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology Low threshold voltage
Datasheet: PMXB56EN , PMXB65ENE , PMXB65UPE , PMXB75UPE , PMZ1200UPE , PMZ130UNE , PMZ200UNE , PMZ290UN , AON7403 , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE .
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