All MOSFET. PMZ370UNE Datasheet

 

PMZ370UNE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMZ370UNE
   Marking Code: ZM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.05 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.77 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: DFN1006-3

 PMZ370UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMZ370UNE Datasheet (PDF)

 ..1. Size:210K  nxp
 pmz370une.pdf

PMZ370UNE PMZ370UNE

PMZ370UNE30 V, N-channel Trench MOSFET14 May 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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