All MOSFET. PMZ370UNE Datasheet

 

PMZ370UNE Datasheet and Replacement


   Type Designator: PMZ370UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: DFN1006-3
 

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PMZ370UNE Datasheet (PDF)

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PMZ370UNE

PMZ370UNE30 V, N-channel Trench MOSFET14 May 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect

Datasheet: PMZ1200UPE , PMZ130UNE , PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , 2SK3918 , PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN .

History: NCE6080AI | IXFP10N60P | PMV30ENEA | P062ABDF | RU1H35R | IXFR24N90P | LP9435LT1G

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