PMZ370UNE Specs and Replacement

Type Designator: PMZ370UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm

Package: DFN1006-3

PMZ370UNE substitution

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PMZ370UNE datasheet

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 pmz370une.pdf pdf_icon

PMZ370UNE

PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Elect... See More ⇒

Detailed specifications: PMZ1200UPE, PMZ130UNE, PMZ200UNE, PMZ290UN, PMZ290UNE, PMZ290UNE2, PMZ320UPE, PMZ350UPE, EMB04N03H, PMZ390UNE, PMZ550UNE, PMZ600UNE, PMZ950UPE, PMZB1200UPE, PMZB150UNE, PMZB200UNE, PMZB290UN

Keywords - PMZ370UNE MOSFET specs

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