PMZ550UNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMZ550UNE
Marking Code: ZK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.59 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.6 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
Package: DFN1006-3
PMZ550UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMZ550UNE Datasheet (PDF)
pmz550une.pdf
PMZ550UNE30 V, N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele
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