All MOSFET. PMZ550UNE Datasheet

 

PMZ550UNE Datasheet and Replacement


   Type Designator: PMZ550UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: DFN1006-3
 

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PMZ550UNE Datasheet (PDF)

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PMZ550UNE

PMZ550UNE30 V, N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele

Datasheet: PMZ200UNE , PMZ290UN , PMZ290UNE , PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , 2N7002 , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE , PMZB290UNE2 .

History: IRF7759L2TR1PBF

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