All MOSFET. PMZ600UNE Datasheet

 

PMZ600UNE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMZ600UNE
   Marking Code: SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.4 nC
   trⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 5.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: DFN1006-3

 PMZ600UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMZ600UNE Datasheet (PDF)

 ..1. Size:233K  nxp
 pmz600une.pdf

PMZ600UNE PMZ600UNE

PMZ600UNE20 V, N-channel Trench MOSFET26 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 0.6

 0.1. Size:719K  nxp
 pmz600unel.pdf

PMZ600UNE PMZ600UNE

PMZ600UNEL20 V, N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small SMD plastic package: 1.0 0.6 0.48

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History: OSG65R069HSF

 

 
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