All MOSFET. PMZB420UN Datasheet

 

PMZB420UN Datasheet and Replacement


   Type Designator: PMZB420UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 7.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: DFN1006B-3
 

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PMZB420UN Datasheet (PDF)

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PMZB420UN

PMZB420UN30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Low threshold voltage

Datasheet: PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , IRF640 , PMZB550UNE , PMZB600UNE , PMZB670UPE , PMZB790SN , PMZB950UPE , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 .

History: P0920BD | TSF10N65M | LNC4N65 | STE53NC50 | 2SK2527-01MR | IXTH1N200P3HV | AOB2502L

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