PMZB420UN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMZB420UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 7.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
Package: DFN1006B-3
PMZB420UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMZB420UN Datasheet (PDF)
..1. Size:893K nxp
pmzb420un.pdf
pmzb420un.pdf
PMZB420UN30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Low threshold voltage
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