PMZB550UNE Specs and Replacement

Type Designator: PMZB550UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.59 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 5.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm

Package: DFN1006B-3

PMZB550UNE substitution

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PMZB550UNE datasheet

 ..1. Size:217K  nxp
 pmzb550une.pdf pdf_icon

PMZB550UNE

PMZB550UNE 30 V, N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

Detailed specifications: PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE, PMZB370UNE, PMZB380XN, PMZB390UNE, PMZB420UN, IRFZ44, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, PNM23T100V6, PNM23T703E0-2, PNM523T201E0, PNM523T703E0-2

Keywords - PMZB550UNE MOSFET specs

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