All MOSFET. PMZB550UNE Datasheet

 

PMZB550UNE Datasheet and Replacement


   Type Designator: PMZB550UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: DFN1006B-3
 

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PMZB550UNE Datasheet (PDF)

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PMZB550UNE

PMZB550UNE30 V, N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

Datasheet: PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN , IRF640 , PMZB600UNE , PMZB670UPE , PMZB790SN , PMZB950UPE , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 .

History: KIA4603A | AM2330NE

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