All MOSFET. PMZB790SN Datasheet

 

PMZB790SN Datasheet and Replacement


   Type Designator: PMZB790SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 4.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm
   Package: DFN1006B-3
 

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PMZB790SN Datasheet (PDF)

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PMZB790SN

PMZB790SN60 V, single N-channel Trench MOSFET14 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Log

Datasheet: PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN , PMZB550UNE , PMZB600UNE , PMZB670UPE , IRLZ44N , PMZB950UPE , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , PNM723T703E0-2 , PNM8N30V60 .

History: PNM23T100V6 | PMZB390UNE | SSM3K15FU | SST175 | SSM3K15F | 2N7241 | STI57N65M5

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