PMZB790SN Datasheet and Replacement
Type Designator: PMZB790SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 4.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm
Package: DFN1006B-3
PMZB790SN substitution
PMZB790SN Datasheet (PDF)
pmzb790sn.pdf

PMZB790SN60 V, single N-channel Trench MOSFET14 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology Log
Datasheet: PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN , PMZB550UNE , PMZB600UNE , PMZB670UPE , IRFB4110 , PMZB950UPE , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , PNM723T703E0-2 , PNM8N30V60 .
History: IRHY67C30CM | AP50WN1K0I | RSS060P05FRA | PNM23T100V6 | CS3N100F | SHD225609 | MTD6N15T4G
Keywords - PMZB790SN MOSFET datasheet
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History: IRHY67C30CM | AP50WN1K0I | RSS060P05FRA | PNM23T100V6 | CS3N100F | SHD225609 | MTD6N15T4G



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