All MOSFET. PMZB950UPE Datasheet

 

PMZB950UPE Datasheet and Replacement


   Type Designator: PMZB950UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1006B-3
 

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PMZB950UPE Datasheet (PDF)

 ..1. Size:225K  nxp
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PMZB950UPE

PMZB950UPE20 V, P-channel Trench MOSFET28 July 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic packa

 0.1. Size:719K  nxp
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PMZB950UPE

PMZB950UPEL20 V, P-channel Trench MOSFET5 December 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3(SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and

Datasheet: PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN , PMZB550UNE , PMZB600UNE , PMZB670UPE , PMZB790SN , IRF640N , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , PNM723T703E0-2 , PNM8N30V60 , PNM8P30V12 .

History: SI8402DB | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | HY050N08C2 | SM140R50CT1TL

Keywords - PMZB950UPE MOSFET datasheet

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