PNM23T100V6 Specs and Replacement

Type Designator: PNM23T100V6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT-223

PNM23T100V6 substitution

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PNM23T100V6 datasheet

 ..1. Size:125K  prisemi
 pnm23t100v6.pdf pdf_icon

PNM23T100V6

PNM23T100V6 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 100 110@VGS=10V 6 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current- C... See More ⇒

 8.1. Size:112K  prisemi
 pnm23t703e0-2.pdf pdf_icon

PNM23T100V6

PNM23T703E0-2 N-Channel MOSFET Description PNM23T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) VGS(th)(V) ID(A) G 1 40 7.5@ VGS=10V 0.5 to 1.5 0.2 S 2 Electrical characteristics per line@25 ( unless otherwise specified)... See More ⇒

Detailed specifications: PMZB380XN, PMZB390UNE, PMZB420UN, PMZB550UNE, PMZB600UNE, PMZB670UPE, PMZB790SN, PMZB950UPE, IRF640N, PNM23T703E0-2, PNM523T201E0, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, PNM8N30V60, PNM8P30V12, PNM8P30V20

Keywords - PNM23T100V6 MOSFET specs

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