All MOSFET. PNM23T703E0-2 Datasheet

 

PNM23T703E0-2 Datasheet and Replacement


   Type Designator: PNM23T703E0-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

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PNM23T703E0-2 Datasheet (PDF)

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 pnm23t703e0-2.pdf pdf_icon

PNM23T703E0-2

PNM23T703E0-2 N-Channel MOSFET Description PNM23T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 40 7.5@ VGS=10V 0.5 to 1.5 0.2 S2 Electrical characteristics per line@25( unless otherwise specified)

 8.1. Size:125K  prisemi
 pnm23t100v6.pdf pdf_icon

PNM23T703E0-2

PNM23T100V6 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 100 110@VGS=10V 6G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 V Drain Current- C

Datasheet: PMZB390UNE , PMZB420UN , PMZB550UNE , PMZB600UNE , PMZB670UPE , PMZB790SN , PMZB950UPE , PNM23T100V6 , 10N60 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , PNM723T703E0-2 , PNM8N30V60 , PNM8P30V12 , PNM8P30V20 , PNMDP100V10 .

History: 2SK2280 | OSG65R125KF | IRFU010 | SVGP157R5NT | P2003EVT | IXFH42N50P2 | IPA60R280CFD7

Keywords - PNM23T703E0-2 MOSFET datasheet

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