PNM8N30V60 Specs and Replacement

Type Designator: PNM8N30V60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: PDFN5*6-8L

PNM8N30V60 substitution

- MOSFET ⓘ Cross-Reference Search

 

PNM8N30V60 datasheet

 ..1. Size:123K  prisemi
 pnm8n30v60.pdf pdf_icon

PNM8N30V60

PNM8N30V60 N-Channel 30-V(D-S) MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) 30 3.7@ VGS=4.5V 60 Internal Structure Top View (PDFN5*6-8L ) D D D D D(5 6 7 8) 8 7 6 5 G(4) S(1 2 3) 1 4 2 3 S S S G Absolute maximum rating@25 Para... See More ⇒

Detailed specifications: PMZB790SN, PMZB950UPE, PNM23T100V6, PNM23T703E0-2, PNM523T201E0, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, AON6414A, PNM8P30V12, PNM8P30V20, PNMDP100V10, PNMDP30V60, PNMDP30V90, PNMDP600V1, PNMDP600V2, PNMDP600V4

Keywords - PNM8N30V60 MOSFET specs

 PNM8N30V60 cross reference

 PNM8N30V60 equivalent finder

 PNM8N30V60 pdf lookup

 PNM8N30V60 substitution

 PNM8N30V60 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.