PNM8P30V12
MOSFET. Datasheet pdf. Equivalent
Type Designator: PNM8P30V12
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
SOP-8
PNM8P30V12
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PNM8P30V12
Datasheet (PDF)
..1. Size:107K prisemi
pnm8p30v12.pdf 
PNM8P30V12 N-Channel MOSFET Description The N-channel MOSFET has been designed specifically to improve the D5678 overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed. G4 MOSFET Product Summary VDS(V) RDS(on)(m) I
6.1. Size:121K prisemi
pnm8p30v20.pdf
PNM8P30V20 N-Channel 30-V(D-S) MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 30 3.7@ VGS=4.5V 23Internal Structure Top View (SOP-8) D S D 1 8 S 2 7 D 6 G 3 D S 5 4 D G S Absolute maximum rating@25 Parameter Symbol Maximum
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