PNM8P30V20 Specs and Replacement

Type Designator: PNM8P30V20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SOP-8

PNM8P30V20 substitution

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PNM8P30V20 datasheet

 ..1. Size:121K  prisemi
 pnm8p30v20.pdf pdf_icon

PNM8P30V20

PNM8P30V20 N-Channel 30-V(D-S) MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) 30 3.7@ VGS=4.5V 23 Internal Structure Top View (SOP-8) D S D 1 8 S 2 7 D 6 G 3 D S 5 4 D G S Absolute maximum rating@25 Parameter Symbol Maximum... See More ⇒

 6.1. Size:107K  prisemi
 pnm8p30v12.pdf pdf_icon

PNM8P30V20

PNM8P30V12 N-Channel MOSFET Description The N-channel MOSFET has been designed specifically to improve the D 5 6 7 8 overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed. G 4 MOSFET Product Summary VDS(V) RDS(on)(m ) I... See More ⇒

Detailed specifications: PNM23T100V6, PNM23T703E0-2, PNM523T201E0, PNM523T703E0-2, PNM723T201E0, PNM723T703E0-2, PNM8N30V60, PNM8P30V12, 2N7000, PNMDP100V10, PNMDP30V60, PNMDP30V90, PNMDP600V1, PNMDP600V2, PNMDP600V4, PNMET20V06E, PNMIP600V1

Keywords - PNM8P30V20 MOSFET specs

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