All MOSFET. PNM8P30V20 Datasheet

 

PNM8P30V20 Datasheet and Replacement


   Type Designator: PNM8P30V20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: SOP-8
 

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PNM8P30V20 Datasheet (PDF)

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PNM8P30V20

PNM8P30V20 N-Channel 30-V(D-S) MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 30 3.7@ VGS=4.5V 23Internal Structure Top View (SOP-8) D S D 1 8 S 2 7 D 6 G 3 D S 5 4 D G S Absolute maximum rating@25 Parameter Symbol Maximum

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PNM8P30V20

PNM8P30V12 N-Channel MOSFET Description The N-channel MOSFET has been designed specifically to improve the D5678 overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed. G4 MOSFET Product Summary VDS(V) RDS(on)(m) I

Datasheet: PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , PNM723T703E0-2 , PNM8N30V60 , PNM8P30V12 , IRF9540 , PNMDP100V10 , PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 .

History: SM7A25NSUB | AP2306AGN

Keywords - PNM8P30V20 MOSFET datasheet

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