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PNMDP600V4 Spec and Replacement


   Type Designator: PNMDP600V4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   tr ⓘ - Rise Time: 28.7 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-252

 PNMDP600V4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PNMDP600V4 Specs

 ..1. Size:113K  prisemi
 pnmdp600v4 pnmip600v4.pdf pdf_icon

PNMDP600V4

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

 5.1. Size:113K  prisemi
 pnmdp600v2 pnmip600v2.pdf pdf_icon

PNMDP600V4

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒

 5.2. Size:113K  prisemi
 pnmdp600v1 pnmip600v1.pdf pdf_icon

PNMDP600V4

PNMDP600V1 PNMIP600V1 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 7.5@ VGS=10V 1.3 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dr... See More ⇒

 9.1. Size:123K  prisemi
 pnmdp30v60.pdf pdf_icon

PNMDP600V4

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) 30 8.3@VGS=10V 60 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25 60 Drai... See More ⇒

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Detailed specifications: PNM8N30V60 , PNM8P30V12 , PNM8P30V20 , PNMDP100V10 , PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , IRF9540 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , PNMT45V2 , PNMT50V02E .

Keywords - PNMDP600V4 MOSFET specs

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