All MOSFET. PNMET20V06E Datasheet

 

PNMET20V06E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PNMET20V06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-523

 PNMET20V06E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PNMET20V06E Datasheet (PDF)

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 pnmet20v06e.pdf

PNMET20V06E PNMET20V06E

PNMET20V06E N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.3@ VGS=4.5V 0.6G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQD19N10LTM

 

 
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