PNMET20V06E Specs and Replacement
Type Designator: PNMET20V06E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-523
PNMET20V06E substitution
- MOSFET ⓘ Cross-Reference Search
PNMET20V06E datasheet
pnmet20v06e.pdf
PNMET20V06E N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.3@ VGS=4.5V 0.6 G 1 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source ... See More ⇒
Detailed specifications: PNM8P30V12, PNM8P30V20, PNMDP100V10, PNMDP30V60, PNMDP30V90, PNMDP600V1, PNMDP600V2, PNMDP600V4, AON7408, PNMIP600V1, PNMIP600V2, PNMIP600V4, PNMT20V3, PNMT30V6, PNMT45V2, PNMT50V02E, PNMT60V02
Keywords - PNMET20V06E MOSFET specs
PNMET20V06E cross reference
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PNMET20V06E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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