All MOSFET. PNMET20V06E Datasheet

 

PNMET20V06E Datasheet and Replacement


   Type Designator: PNMET20V06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-523
 

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PNMET20V06E Datasheet (PDF)

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PNMET20V06E

PNMET20V06E N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.3@ VGS=4.5V 0.6G1 S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drain-Source

Datasheet: PNM8P30V12 , PNM8P30V20 , PNMDP100V10 , PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , 2N7000 , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , PNMT45V2 , PNMT50V02E , PNMT60V02 .

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