PNMT45V2 Datasheet and Replacement
Type Designator: PNMT45V2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT-23
PNMT45V2 substitution
PNMT45V2 Datasheet (PDF)
pnmt45v2.pdf

PNMT45V2 2.5V Drive N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 100@ VGS=10V G1 45 110@ VGS=4.5V 2 160@ VGS=2.5V S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 45 VGate-Source Voltage VGS 12
Datasheet: PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , IRLB4132 , PNMT50V02E , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 , PNMTO600V5 , PNMTO600V7 .
History: SSP60R099SFD | SJMN088R65F
Keywords - PNMT45V2 MOSFET datasheet
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History: SSP60R099SFD | SJMN088R65F



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