All MOSFET. PNMT50V02E Datasheet

 

PNMT50V02E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PNMT50V02E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 0.22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.4 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-23

 PNMT50V02E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PNMT50V02E Datasheet (PDF)

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 pnmt50v02e.pdf

PNMT50V02E PNMT50V02E

PNMT50V02E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (3) VDS(V) RDS(on)() ID(A) 50 1@VGS=10V 0.22G (1) S (2) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 50 VGate-Source Voltage VGS 20 V Drain Current- Cont

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