PNMT50V02E Specs and Replacement

Type Designator: PNMT50V02E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-23

PNMT50V02E substitution

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PNMT50V02E datasheet

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PNMT50V02E

PNMT50V02E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (3) VDS(V) RDS(on)( ) ID(A) 50 1@VGS=10V 0.22 G (1) S (2) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS 20 V Drain Current- Cont... See More ⇒

Detailed specifications: PNMDP600V4, PNMET20V06E, PNMIP600V1, PNMIP600V2, PNMIP600V4, PNMT20V3, PNMT30V6, PNMT45V2, AO3401, PNMT60V02, PNMT60V02E, PNMT60V3, PNMTO600V2, PNMTO600V4, PNMTO600V5, PNMTO600V7, PNMTO600V8

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