All MOSFET. PNMT50V02E Datasheet

 

PNMT50V02E Datasheet and Replacement


   Type Designator: PNMT50V02E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id| ⓘ - Maximum Drain Current: 0.22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.4 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-23
 

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PNMT50V02E Datasheet (PDF)

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PNMT50V02E

PNMT50V02E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (3) VDS(V) RDS(on)() ID(A) 50 1@VGS=10V 0.22G (1) S (2) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 50 VGate-Source Voltage VGS 20 V Drain Current- Cont

Datasheet: PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , PNMT45V2 , AO3400 , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 , PNMTO600V5 , PNMTO600V7 , PNMTO600V8 .

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