PNMTO600V4
MOSFET. Datasheet pdf. Equivalent
Type Designator: PNMTO600V4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
trⓘ - Rise Time: 28.7
nS
Cossⓘ -
Output Capacitance: 51
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2
Ohm
Package:
TO-220
PNMTO600V4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PNMTO600V4
Datasheet (PDF)
..1. Size:119K prisemi
pnmto600v4 pnmtof600v4.pdf 
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra
5.1. Size:124K prisemi
pnmto600v7 pnmtof600v7.pdf
PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.1@ VGS=10V 7.0G1 S3Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 20 V Continuous Drain Curre
5.2. Size:119K prisemi
pnmto600v2 pnmtof600v2.pdf
PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra
5.3. Size:124K prisemi
pnmto600v8 pnmtof600v8.pdf
PNMTO600V8 PNMTOF600V8 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 0.98@ VGS=10V 8.0G1 S3Absolute maximum rating@25 PNMTO6 PNMTOFRating Symbol Units 00V8 600V8 Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 V
5.4. Size:123K prisemi
pnmto600v5 pnmtof600v5.pdf
PNMTO600V5 PNMTOF600V5 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.44@ VGS=10V 5.0G1 S3Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 V TC=25 ID 3.2 ACo
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