All MOSFET. PNMTOF650V13 Datasheet

 

PNMTOF650V13 Datasheet and Replacement


   Type Designator: PNMTOF650V13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F
 

 PNMTOF650V13 substitution

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PNMTOF650V13 Datasheet (PDF)

 ..1. Size:145K  prisemi
 pnmtof650v13.pdf pdf_icon

PNMTOF650V13

PNMTOF650V13 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)() ID(A) 650 0.7@VGS=10V 13G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 650 VGate-Source Voltage VGS 30 V TA=25 13 C

 7.1. Size:119K  prisemi
 pnmto600v4 pnmtof600v4.pdf pdf_icon

PNMTOF650V13

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

 7.2. Size:124K  prisemi
 pnmto600v7 pnmtof600v7.pdf pdf_icon

PNMTOF650V13

PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.1@ VGS=10V 7.0G1 S3Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 20 V Continuous Drain Curre

 7.3. Size:119K  prisemi
 pnmto600v2 pnmtof600v2.pdf pdf_icon

PNMTOF650V13

PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

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Datasheet: PNMTO600V5 , PNMTO600V7 , PNMTO600V8 , PNMTOF600V2 , PNMTOF600V4 , PNMTOF600V5 , PNMTOF600V7 , PNMTOF600V8 , AO4407 , PNMUT20V06 , PNMVT20V03E , PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 .

Keywords - PNMTOF650V13 MOSFET datasheet

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