PNMVT20V03E Specs and Replacement

Type Designator: PNMVT20V03E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT-723

PNMVT20V03E substitution

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PNMVT20V03E datasheet

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PNMVT20V03E

PNMVT20V03E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(mA) 0.5@ VGS=4.0V G 1 20 0.7@ VGS=2.5V 300 0.9@ VGS=1.8V S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage VDS 20 V Gate-So... See More ⇒

Detailed specifications: PNMTO600V8, PNMTOF600V2, PNMTOF600V4, PNMTOF600V5, PNMTOF600V7, PNMTOF600V8, PNMTOF650V13, PNMUT20V06, NCEP15T14, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, PPMDP100V10

Keywords - PNMVT20V03E MOSFET specs

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