All MOSFET. PPM3T20V6 Datasheet

 

PPM3T20V6 Datasheet and Replacement


   Type Designator: PPM3T20V6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23-3L
 

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PPM3T20V6 Datasheet (PDF)

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PPM3T20V6

PPM3T20V6 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) G128 @ VGS=-4.5V -20 -4.5 38 @ VGS=-2.5V S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -20 VGate-Source Voltage VGS 12 V Continuous I

Datasheet: PNMTOF600V4 , PNMTOF600V5 , PNMTOF600V7 , PNMTOF600V8 , PNMTOF650V13 , PNMUT20V06 , PNMVT20V03E , PPF240M , 20N50 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , PPMET20V08 , PPMET20V08E .

History: CEPF634 | 2SJ274 | 2N4858A | FQD4P40 | CED85A3 | LNC10N60

Keywords - PPM3T20V6 MOSFET datasheet

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