All MOSFET. PPM3T20V6 Datasheet

 

PPM3T20V6 Datasheet and Replacement


   Type Designator: PPM3T20V6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23-3L
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PPM3T20V6 Datasheet (PDF)

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PPM3T20V6

PPM3T20V6 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) G128 @ VGS=-4.5V -20 -4.5 38 @ VGS=-2.5V S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -20 VGate-Source Voltage VGS 12 V Continuous I

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTA08N120P | IRFP21N60L | STD6N60M2 | AP2318GEN-HF | UPA2756GR | STT3P2UH7

Keywords - PPM3T20V6 MOSFET datasheet

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