PPM523T201E0 Specs and Replacement

Type Designator: PPM523T201E0

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: SOT-523

PPM523T201E0 substitution

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PPM523T201E0 datasheet

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PPM523T201E0

PPM523T201E0 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(mA) 0.6@ VGS=-4.5V G 1 -20 0.9@ VGS=-2.5V 300 1.5@ VGS=-1.8V S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage VDS -20 V Ga... See More ⇒

Detailed specifications: PNMTOF600V5, PNMTOF600V7, PNMTOF600V8, PNMTOF650V13, PNMUT20V06, PNMVT20V03E, PPF240M, PPM3T20V6, IRFP450, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3

Keywords - PPM523T201E0 MOSFET specs

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