PPM6N12V10 MOSFET Datasheet: P-Ch, 12V, 10A. Full specification with pinout and replacement list

PPM6N12V10 Specs and Replacement

   Type Designator: PPM6N12V10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN2X2-6L

PPM6N12V10 substitution

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PPM6N12V10 datasheet

..1. Size:1131K prisemi
ppm6n12v10.pdf pdf_icon

PPM6N12V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary V (V) R (m ) I (A) DS DS(on) D -12 12 @ V =-4.5V -10 GS Internal structure Bottom View D D G 3 2 1 6 D 1 D 5 D D 2 D S 4 S G 3 6 5 4 D D S Absolute maximum ratin... See More ⇒

9.1. Size:125K prisemi
ppm6n20v10.pdf pdf_icon

PPM6N20V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) -20 14 @ VGS=-4.5V -10 Bottom View Internal structure D D G 3 2 1 1 6 D D 2 5 D D 3 4 G S 6 5 4 D D S Absolute m... See More ⇒

Detailed specifications: PNMTOF600V7 , PNMTOF600V8 , PNMTOF650V13 , PNMUT20V06 , PNMVT20V03E , PPF240M , PPM3T20V6 , PPM523T201E0 , TK10A60D , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , PPMET20V08 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 .