All MOSFET. PPM8P30V10 Datasheet

 

PPM8P30V10 Datasheet and Replacement


   Type Designator: PPM8P30V10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP-8
 

 PPM8P30V10 substitution

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PPM8P30V10 Datasheet (PDF)

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PPM8P30V10

PPM8P30V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D5678 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G40.011 @ VGS=-10V -30 -11 0.015@ VGS=-4.5V S 21 3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ.

Datasheet: PNMUT20V06 , PNMVT20V03E , PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , 4N60 , PPMDP100V10 , PPMET20V08 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 .

History: AP65PN2R6H | TSM4426CS

Keywords - PPM8P30V10 MOSFET datasheet

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