PPM8P30V10 Specs and Replacement

Type Designator: PPM8P30V10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP-8

PPM8P30V10 substitution

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PPM8P30V10 datasheet

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ppm8p30v10.pdf pdf_icon

PPM8P30V10

PPM8P30V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 5 6 7 8 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 4 0.011 @ VGS=-10V -30 -11 0.015@ VGS=-4.5V S 2 1 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ.... See More ⇒

Detailed specifications: PNMUT20V06, PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, 4N60, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3, PPMT12V4, PPMT20V3, PPMT20V4E, PPMT30V3

Keywords - PPM8P30V10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.