PPM8P30V10 Specs and Replacement
Type Designator: PPM8P30V10
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP-8
PPM8P30V10 substitution
- MOSFET ⓘ Cross-Reference Search
PPM8P30V10 datasheet
ppm8p30v10.pdf
PPM8P30V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 5 6 7 8 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 4 0.011 @ VGS=-10V -30 -11 0.015@ VGS=-4.5V S 2 1 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ.... See More ⇒
Detailed specifications: PNMUT20V06, PNMVT20V03E, PPF240M, PPM3T20V6, PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, 4N60, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3, PPMT12V4, PPMT20V3, PPMT20V4E, PPMT30V3
Keywords - PPM8P30V10 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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