PPMET20V08 MOSFET Datasheet: P-Ch, 20V, 0.8A. Full specification with pinout and replacement list

PPMET20V08 Specs and Replacement

   Type Designator: PPMET20V08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT-523

PPMET20V08 substitution

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PPMET20V08 datasheet

..1. Size:109K prisemi
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PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.85@ VGS=-4.5V -0.8 -20 1.2@ VGS=-2.5V -0.5 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARA... See More ⇒

0.1. Size:109K prisemi
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PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 0.85@ VGS=-4.5V -0.8 G 1 -20 1.2@ VGS=-2.5V -0.5 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHAR... See More ⇒

Detailed specifications: PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , IRF1407 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 .