All MOSFET. PPMET20V08 Datasheet

 

PPMET20V08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PPMET20V08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT-523

 PPMET20V08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PPMET20V08 Datasheet (PDF)

 ..1. Size:109K  prisemi
 ppmet20v08.pdf

PPMET20V08 PPMET20V08

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.85@ VGS=-4.5V -0.8-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARA

 0.1. Size:109K  prisemi
 ppmet20v08e.pdf

PPMET20V08 PPMET20V08

PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.85@ VGS=-4.5V -0.8G1-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHAR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK3121 | AON5802A | WMK099N10HGS | NDT70N03

 

 
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