PPMET20V08 Datasheet and Replacement
Type Designator: PPMET20V08
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOT-523
PPMET20V08 substitution
PPMET20V08 Datasheet (PDF)
ppmet20v08.pdf

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.85@ VGS=-4.5V -0.8-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARA
ppmet20v08e.pdf

PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.85@ VGS=-4.5V -0.8G1-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHAR
Datasheet: PPF240M , PPM3T20V6 , PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , P0903BDG , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 .
History: BRCS100N06BD | APT50M75JLLU2 | PDC3902X | P2504EI | FHF4N65E | UT100N03 | HGN170N10AL
Keywords - PPMET20V08 MOSFET datasheet
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History: BRCS100N06BD | APT50M75JLLU2 | PDC3902X | P2504EI | FHF4N65E | UT100N03 | HGN170N10AL



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