All MOSFET. PPMET20V08 Datasheet

 

PPMET20V08 Datasheet and Replacement


   Type Designator: PPMET20V08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT-523
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PPMET20V08 Datasheet (PDF)

 ..1. Size:109K  prisemi
 ppmet20v08.pdf pdf_icon

PPMET20V08

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.85@ VGS=-4.5V -0.8-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARA

 0.1. Size:109K  prisemi
 ppmet20v08e.pdf pdf_icon

PPMET20V08

PPMET20V08E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.85@ VGS=-4.5V -0.8G1-20 1.2@ VGS=-2.5V -0.5S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHAR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: WML80R350S | PDS3807 | SSM3K302T | AFN1932 | FDP79N15 | IRF6215SPBF

Keywords - PPMET20V08 MOSFET datasheet

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