All MOSFET. PPMS8N20V3 Datasheet

 

PPMS8N20V3 Datasheet and Replacement


   Type Designator: PPMS8N20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DFN3X2-8L
 

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PPMS8N20V3 Datasheet (PDF)

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PPMS8N20V3

PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode Description S3 K78MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.110 @ VGS=-4.5V -2.8G4 -20 0.160 @ VGS=-2.5V -2.00.240 @ VGS=-1.8V -1.8Schottky Product Summary A12 D56 VKA(V) VF(V) IF(A) 20 0.48V @ 0.5A 1.0 Electrical characteristics per line@25( unless othe

Datasheet: PPM523T201E0 , PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , PPMET20V08 , PPMET20V08E , 75N75 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 , PPMUT20V3 .

History: NCE0275D | AP4438GYT-HF | INK0002AM1 | 2SK3713 | HM2N70R | H5N5006DL | STI15NM60N

Keywords - PPMS8N20V3 MOSFET datasheet

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