All MOSFET. PPMS8N20V3 Datasheet

 

PPMS8N20V3 Datasheet and Replacement


   Type Designator: PPMS8N20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DFN3X2-8L
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PPMS8N20V3 Datasheet (PDF)

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PPMS8N20V3

PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode Description S3 K78MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.110 @ VGS=-4.5V -2.8G4 -20 0.160 @ VGS=-2.5V -2.00.240 @ VGS=-1.8V -1.8Schottky Product Summary A12 D56 VKA(V) VF(V) IF(A) 20 0.48V @ 0.5A 1.0 Electrical characteristics per line@25( unless othe

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - PPMS8N20V3 MOSFET datasheet

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