PPMS8N20V3 Specs and Replacement

Type Designator: PPMS8N20V3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: DFN3X2-8L

PPMS8N20V3 substitution

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PPMS8N20V3 datasheet

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 ppms8n20v3.pdf pdf_icon

PPMS8N20V3

PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode Description S 3 K 7 8 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 0.110 @ VGS=-4.5V -2.8 G 4 -20 0.160 @ VGS=-2.5V -2.0 0.240 @ VGS=-1.8V -1.8 Schottky Product Summary A 1 2 D 5 6 VKA(V) VF(V) IF(A) 20 0.48V @ 0.5A 1.0 Electrical characteristics per line@25 ( unless othe... See More ⇒

Detailed specifications: PPM523T201E0, PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, PPMET20V08E, 10N65, PPMT12V4, PPMT20V3, PPMT20V4E, PPMT30V3, PPMT30V4, PPMT32V4, PPMT50V02, PPMUT20V3

Keywords - PPMS8N20V3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.