All MOSFET. PPMT12V4 Datasheet

 

PPMT12V4 Datasheet and Replacement


   Type Designator: PPMT12V4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-23
 

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PPMT12V4 Datasheet (PDF)

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PPMT12V4

PPMT12V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1-12 0.045 @ VGS=-4.5V -4.3S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -12 VGate-Source Voltage VGS 8.0 V Continuous TA=25 ID -4.3 AD

Datasheet: PPM6N12V10 , PPM6N20V10 , PPM723T201E0 , PPM8P30V10 , PPMDP100V10 , PPMET20V08 , PPMET20V08E , PPMS8N20V3 , 13N50 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 , PPMUT20V3 , PS03N20SA .

History: 2SK2896-01S | AONP36320 | JCS2N60CB | 2SK3935 | SVF4N60T | 2SK293 | AONR32314

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