PPMT12V4 Specs and Replacement

Type Designator: PPMT12V4

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-23

PPMT12V4 substitution

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PPMT12V4 datasheet

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PPMT12V4

PPMT12V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 -12 0.045 @ VGS=-4.5V -4.3 S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8.0 V Continuous TA=25 ID -4.3 A D... See More ⇒

Detailed specifications: PPM6N12V10, PPM6N20V10, PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3, 5N60, PPMT20V3, PPMT20V4E, PPMT30V3, PPMT30V4, PPMT32V4, PPMT50V02, PPMUT20V3, PS03N20SA

Keywords - PPMT12V4 MOSFET specs

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