PPMT20V4E Specs and Replacement

Type Designator: PPMT20V4E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: SOT-23

PPMT20V4E substitution

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PPMT20V4E datasheet

 ..1. Size:225K  prisemi
 ppmt20v4e.pdf pdf_icon

PPMT20V4E

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin... See More ⇒

 7.1. Size:109K  prisemi
 ppmt20v3.pdf pdf_icon

PPMT20V4E

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE... See More ⇒

 9.1. Size:1155K  prisemi
 ppmt2301.pdf pdf_icon

PPMT20V4E

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Detailed specifications: PPM723T201E0, PPM8P30V10, PPMDP100V10, PPMET20V08, PPMET20V08E, PPMS8N20V3, PPMT12V4, PPMT20V3, SI2302, PPMT30V3, PPMT30V4, PPMT32V4, PPMT50V02, PPMUT20V3, PS03N20SA, PS03P20SA, PS04N20SA

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