PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE

PPMT2301P-Channel MOSFETDescription Trench Power LV MOSFET technology High Power and Current handing capability Low Gate ChargeMOSFET Product SummaryVDS(V) RDS(on)(m) ID(A)Top View90@VGS = -4.5V-20 -4.0135@VGS = -2.5VApplications PWM applications Load switch Circuit Diagram Power management2301Marking (Top View)Absolute maximum rating@25