PPMT30V4 MOSFET. Datasheet pdf. Equivalent
Type Designator: PPMT30V4
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
PPMT30V4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PPMT30V4 Datasheet (PDF)
ppmt30v4.pdf
PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) DG10.053 @ V =-10V GS-30 -4.2 0.065@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units
ppmt30v3.pdf
PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG10.058 @ V =-10V GS-30 -3 0.075@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsO
ppmt32v4.pdf
PPMT32V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) G1-30 67 @ VGS=-4.5V -4.3S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 V Continuous Drain Current ID -4.3 A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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