PPMT30V4 MOSFET Datasheet: P-Ch, 30V, 4.2A. Full specification with pinout and replacement list

PPMT30V4 Specs and Replacement

   Type Designator: PPMT30V4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

PPMT30V4 substitution

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PPMT30V4 datasheet

..1. Size:226K prisemi
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PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 0.053 @ V =-10V GS -30 -4.2 0.065@ V =-4.5V GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units... See More ⇒

7.1. Size:222K prisemi
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PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 0.058 @ V =-10V GS -30 -3 0.075@ V =-4.5V GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O... See More ⇒

9.1. Size:126K prisemi
ppmt32v4.pdf pdf_icon

PPMT32V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) G 1 -30 67 @ VGS=-4.5V -4.3 S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -4.3 A ... See More ⇒

Detailed specifications: PPMDP100V10 , PPMET20V08 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , 18N50 , PPMT32V4 , PPMT50V02 , PPMUT20V3 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB .