All MOSFET. PPMT30V4 Datasheet

 

PPMT30V4 Datasheet and Replacement


   Type Designator: PPMT30V4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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PPMT30V4 Datasheet (PDF)

 ..1. Size:226K  prisemi
ppmt30v4.pdf pdf_icon

PPMT30V4

PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) DG10.053 @ V =-10V GS-30 -4.2 0.065@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units

 7.1. Size:222K  prisemi
ppmt30v3.pdf pdf_icon

PPMT30V4

PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG10.058 @ V =-10V GS-30 -3 0.075@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsO

 9.1. Size:126K  prisemi
ppmt32v4.pdf pdf_icon

PPMT30V4

PPMT32V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) G1-30 67 @ VGS=-4.5V -4.3S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 V Continuous Drain Current ID -4.3 A

Datasheet: PPMDP100V10 , PPMET20V08 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , 75N75 , PPMT32V4 , PPMT50V02 , PPMUT20V3 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB .

History: SGSP474 | 2SK1352 | HM4490 | BUK7Y1R4-40H | AONR26309A

Keywords - PPMT30V4 MOSFET datasheet

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