All MOSFET. PPMT50V02 Datasheet

 

PPMT50V02 Datasheet and Replacement


   Type Designator: PPMT50V02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT-23
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PPMT50V02 Datasheet (PDF)

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PPMT50V02

PPMT50V02 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(mA) G1-50 10 @ VGS=-10V -130S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -50 VGate-Source Voltage VGS 20 V Continuous Drain Current ID -130 mA

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