All MOSFET. PPMT50V02 Datasheet

 

PPMT50V02 Datasheet and Replacement


   Type Designator: PPMT50V02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT-23
 

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PPMT50V02 Datasheet (PDF)

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PPMT50V02

PPMT50V02 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(mA) G1-50 10 @ VGS=-10V -130S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -50 VGate-Source Voltage VGS 20 V Continuous Drain Current ID -130 mA

Datasheet: PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , STF13NM60N , PPMUT20V3 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA , PS06N20DA .

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