PPMT50V02 PDF and Equivalents Search

 

PPMT50V02 Specs and Replacement


   Type Designator: PPMT50V02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT-23
 

 PPMT50V02 substitution

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PPMT50V02 datasheet

 ..1. Size:125K  prisemi
 ppmt50v02.pdf pdf_icon

PPMT50V02

PPMT50V02 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(mA) G 1 -50 10 @ VGS=-10V -130 S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -130 mA... See More ⇒

Detailed specifications: PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , IRF520 , PPMUT20V3 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA , PS06N20DA .

History: 8N60KL-TF1-T | KQB27P06

Keywords - PPMT50V02 MOSFET specs

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