PPMUT20V3 MOSFET. Datasheet pdf. Equivalent
Type Designator: PPMUT20V3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V
Maximum Drain Current |Id|: 2.8 A
Drain-Source Capacitance (Cd): 155 pF
Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
Package: SOT-323
PPMUT20V3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PPMUT20V3 Datasheet (PDF)
1.1. ppmut20v3.pdf 
Size:109K _update_mosfet
PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on)(Ω) ID(A) G（1） 0.095 @ VGS=-4.5V -20 -2.8 0.12@ VGS=-2.5V S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACT
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
