All MOSFET. PPMUT20V3 Datasheet

 

PPMUT20V3 Datasheet and Replacement


   Type Designator: PPMUT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-323
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PPMUT20V3 Datasheet (PDF)

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PPMUT20V3

PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) R () ID(A) DS(on)G10.095 @ V =-4.5V GS-20 -2.8 0.12@ V =-2.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OF

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG65R200JF | SUM90N04-3M3P | WMB115N15HG4 | IRFSL4410Z | MTDK3S6R | SSM3K15AMFV

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