All MOSFET. PPMUT20V3 Datasheet

 

PPMUT20V3 Datasheet and Replacement


   Type Designator: PPMUT20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-323
 

 PPMUT20V3 substitution

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PPMUT20V3 Datasheet (PDF)

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PPMUT20V3

PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) R () ID(A) DS(on)G10.095 @ V =-4.5V GS-20 -2.8 0.12@ V =-2.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OF

Datasheet: PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 , IRFB31N20D , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA , PS06N20DA , PS06N20DEA .

Keywords - PPMUT20V3 MOSFET datasheet

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