All MOSFET. PPMUT20V3 Datasheet


PPMUT20V3 MOSFET. Datasheet pdf. Equivalent

Type Designator: PPMUT20V3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 2.8 A

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: SOT-323

PPMUT20V3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


PPMUT20V3 Datasheet (PDF)

1.1. ppmut20v3.pdf Size:109K _update_mosfet


 PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary VDS(V) RDS(on)(Ω) ID(A) G(1) 0.095 @ VGS=-4.5V -20 -2.8 0.12@ VGS=-2.5V S(2) Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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