PPMUT20V3 Specs and Replacement
Type Designator: PPMUT20V3
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-323
PPMUT20V3 substitution
- MOSFET ⓘ Cross-Reference Search
PPMUT20V3 datasheet
ppmut20v3.pdf
PPMUT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) R ( ) ID(A) DS(on) G 1 0.095 @ V =-4.5V GS -20 -2.8 0.12@ V =-2.5V GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OF... See More ⇒
Detailed specifications: PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 , IRF2807 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA , PS06N20DA , PS06N20DEA .
Keywords - PPMUT20V3 MOSFET specs
PPMUT20V3 cross reference
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PPMUT20V3 substitution
PPMUT20V3 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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