PS03N20SA Datasheet and Replacement
Type Designator: PS03N20SA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-23
PS03N20SA substitution
PS03N20SA Datasheet (PDF)
ps03n20sa.pdf
PS03N20SA 20V Single Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS03N20SA 20V Single Channel NMOSFET 2. Applications 1. General Description PWM applicationsThe PS03N20SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge. This device is suitable fo
sps03n60c3.pdf
SPS03N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPS03N60C3 PG-TO251-3-11 03N60C3Maximum RatingsPara
Datasheet: PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , PPMT32V4 , PPMT50V02 , PPMUT20V3 , IRFZ24N , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA , PS06N20DA , PS06N20DEA , PS06N30SA .
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