PS60N60 Specs and Replacement

Type Designator: PS60N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-220AB

PS60N60 substitution

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PS60N60 datasheet

 ..1. Size:188K  sirectsemi
 ps60n60.pdf pdf_icon

PS60N60

E L E C T R O N I C PS60N60 N-Channel Enhancement Mode Field Effect Transistor - 60Amp 60Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap... See More ⇒

 9.1. Size:54K  international rectifier
 irfps60n50c.pdf pdf_icon

PS60N60

PD- 93932 PROVISIONAL IRFPS60N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.038 60A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-247 ... See More ⇒

Detailed specifications: PS05N20DA, PS06N20DA, PS06N20DEA, PS06N30SA, PS06P30DA, PS06P30SA, PS20N600A, PS4953A, IRF830, PS75N75, PS75N75A, PS8205A, PS8205B, PS90N80, PSMG100-05, PSMG150-01, PSMG50-05

Keywords - PS60N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs