All MOSFET. PS90N80 Datasheet

 

PS90N80 Datasheet and Replacement


   Type Designator: PS90N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220AB
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PS90N80 Datasheet (PDF)

 ..1. Size:189K  sirectsemi
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PS90N80

E L E C T R O N I C PS90N80N-Channel Enhancement Mode Field Effect Transistor - 90Amp 80Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D-High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap

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History: SI1036X | HLML6401 | AUIRF7316Q | CS4N60A3HD | SES779 | FDD6637 | AP85T03GH-HF

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