All MOSFET. PS90N80 Datasheet

 

PS90N80 Datasheet and Replacement


   Type Designator: PS90N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220AB
 

 PS90N80 substitution

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PS90N80 Datasheet (PDF)

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PS90N80

E L E C T R O N I C PS90N80N-Channel Enhancement Mode Field Effect Transistor - 90Amp 80Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D-High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap

Datasheet: PS06P30SA , PS20N600A , PS4953A , PS60N60 , PS75N75 , PS75N75A , PS8205A , PS8205B , IRF9640 , PSMG100-05 , PSMG150-01 , PSMG50-05 , PSMG60-08 , PSMN003-30B , PSMN003-30P , PSMN004-36B , PSMN004-55W .

History: IPD800N06NG

Keywords - PS90N80 MOSFET datasheet

 PS90N80 cross reference
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