All MOSFET. PS90N80 Datasheet

 

PS90N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PS90N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220AB

 PS90N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PS90N80 Datasheet (PDF)

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 ps90n80.pdf

PS90N80 PS90N80

E L E C T R O N I C PS90N80N-Channel Enhancement Mode Field Effect Transistor - 90Amp 80Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D-High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: UT2311 | SSF6646 | SI5475DDC | SML20T75 | NCE70N1K1I

 

 
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