PS90N80 Specs and Replacement

Type Designator: PS90N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220AB

PS90N80 substitution

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PS90N80 datasheet

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 ps90n80.pdf pdf_icon

PS90N80

E L E C T R O N I C PS90N80 N-Channel Enhancement Mode Field Effect Transistor - 90Amp 80Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap... See More ⇒

Detailed specifications: PS06P30SA, PS20N600A, PS4953A, PS60N60, PS75N75, PS75N75A, PS8205A, PS8205B, K2611, PSMG100-05, PSMG150-01, PSMG50-05, PSMG60-08, PSMN003-30B, PSMN003-30P, PSMN004-36B, PSMN004-55W

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