PSMG50-05 Specs and Replacement
Type Designator: PSMG50-05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ECO-PAC2
PSMG50-05 substitution
- MOSFET ⓘ Cross-Reference Search
PSMG50-05 datasheet
psmg50-05.pdf
ECO-PACTM 2 HiPerFETTM Power MOSFET ID25 = 43 A VDSS = 500 V in ECO-PAC 2 PSMG 50/05* RDSon = 100 m (Electrically Isolated Back Surface) trr ... See More ⇒
Detailed specifications: PS60N60, PS75N75, PS75N75A, PS8205A, PS8205B, PS90N80, PSMG100-05, PSMG150-01, MMIS60R580P, PSMG60-08, PSMN003-30B, PSMN003-30P, PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P
Keywords - PSMG50-05 MOSFET specs
PSMG50-05 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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