PSMG50-05 MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMG50-05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 330 nC
trⓘ - Rise Time: 60 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ECO-PAC2
PSMG50-05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMG50-05 Datasheet (PDF)
psmg50-05.pdf
ECO-PACTM 2HiPerFETTM Power MOSFETID25 = 43 AVDSS = 500 Vin ECO-PAC 2PSMG 50/05*RDSon = 100 m(Electrically Isolated Back Surface)trr
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CJQ4503
History: CJQ4503
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918