All MOSFET. PSMG60-08 Datasheet

 

PSMG60-08 Datasheet and Replacement


   Type Designator: PSMG60-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ECO-PAC2
 

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PSMG60-08 Datasheet (PDF)

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PSMG60-08

ECO-PACTM 2MOSFET Module PSMG 60/08 VDSS = 800 VID25 = 60 ARDS(on) = 0.12 GSPreliminary Data Sheet Dtrr 250 nsMOSFET (data related to single chip)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C, RGS = 1 M 800 VVGS continuous 20 VVGSM transient 30 VTypical picture;

Datasheet: PS75N75 , PS75N75A , PS8205A , PS8205B , PS90N80 , PSMG100-05 , PSMG150-01 , PSMG50-05 , HY1906P , PSMN003-30B , PSMN003-30P , PSMN004-36B , PSMN004-55W , PSMN005-25D , PSMN005-55B , PSMN005-55P , PSMN005-75P .

History: G15N10C | K596

Keywords - PSMG60-08 MOSFET datasheet

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