PSMG60-08 Specs and Replacement

Type Designator: PSMG60-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 1840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: ECO-PAC2

PSMG60-08 substitution

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PSMG60-08 datasheet

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 psmg60-08.pdf pdf_icon

PSMG60-08

ECO-PACTM 2 MOSFET Module PSMG 60/08 VDSS = 800 V ID25 = 60 A RDS(on) = 0.12 G S Preliminary Data Sheet D trr 250 ns MOSFET (data related to single chip) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1 M 800 V VGS continuous 20 V VGSM transient 30 V Typical picture;... See More ⇒

Detailed specifications: PS75N75, PS75N75A, PS8205A, PS8205B, PS90N80, PSMG100-05, PSMG150-01, PSMG50-05, AOD4184A, PSMN003-30B, PSMN003-30P, PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P

Keywords - PSMG60-08 MOSFET specs

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