All MOSFET. PSMG60-08 Datasheet

 

PSMG60-08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMG60-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ECO-PAC2

 PSMG60-08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMG60-08 Datasheet (PDF)

 ..1. Size:133K  powersem
 psmg60-08.pdf

PSMG60-08 PSMG60-08

ECO-PACTM 2MOSFET Module PSMG 60/08 VDSS = 800 VID25 = 60 ARDS(on) = 0.12 GSPreliminary Data Sheet Dtrr 250 nsMOSFET (data related to single chip)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C, RGS = 1 M 800 VVGS continuous 20 VVGSM transient 30 VTypical picture;

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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