WVM12N10 PDF and Equivalents Search

 

WVM12N10 Specs and Replacement

Type Designator: WVM12N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 150 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO3

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WVM12N10 datasheet

 ..1. Size:23K  shaanxi
 wvm12n10.pdf pdf_icon

WVM12N10

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM12N10(MTM12N10) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe... See More ⇒

Detailed specifications: PSMN013-30MLC, PSMN015-60BS, PSMN016-100BS, WPH4003, WT3139K, WTC3401, WTX1013, WVM11N80, 2N7000, WVM13N50, WVM15N20, WVM15N40, WVM15N45, WVM15N50, WVM15N60, WVM18N20, WVM20N50

Keywords - WVM12N10 MOSFET specs

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