All MOSFET. WVM13N50 Datasheet

 

WVM13N50 Datasheet and Replacement


   Type Designator: WVM13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 66 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3
 

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WVM13N50 Datasheet (PDF)

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WVM13N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM13N50(IRF450)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

Datasheet: PSMN015-60BS , PSMN016-100BS , WPH4003 , WT3139K , WTC3401 , WTX1013 , WVM11N80 , WVM12N10 , IRFB4115 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , WVM18N20 , WVM20N50 , WVM20N8 .

History: WVM15N45 | IRF7488 | WVM28N10 | WMK030N06LG4 | WVM30N20

Keywords - WVM13N50 MOSFET datasheet

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