WVM13N50 PDF and Equivalents Search

 

WVM13N50 Specs and Replacement

Type Designator: WVM13N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 66 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3

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WVM13N50 datasheet

 ..1. Size:23K  shaanxi
 wvm13n50.pdf pdf_icon

WVM13N50

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM13N50(IRF450) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power s... See More ⇒

Detailed specifications: PSMN015-60BS, PSMN016-100BS, WPH4003, WT3139K, WTC3401, WTX1013, WVM11N80, WVM12N10, P55NF06, WVM15N20, WVM15N40, WVM15N45, WVM15N50, WVM15N60, WVM18N20, WVM20N50, WVM20N8

Keywords - WVM13N50 MOSFET specs

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