All MOSFET. WVM18N20 Datasheet

 

WVM18N20 Datasheet and Replacement


   Type Designator: WVM18N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO3
 

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WVM18N20 Datasheet (PDF)

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WVM18N20

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM18N20(IRF240)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

Datasheet: WVM11N80 , WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , WVM15N60 , 2N7000 , WVM20N50 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 , WVM30N20 .

History: FDC640PF095 | NTB75N03-006 | BUZ231 | VN67AK | IPI60R190C6 | TPC8104 | APM4927K

Keywords - WVM18N20 MOSFET datasheet

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